Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy

Makarovsky, O.; Feu, W. H. M.; Patanè, A.; Eaves, L.; Zhuang, Q. D.; Krier, A.; Beanland, R.; Airey, R.
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052115
Academic Journal
We report an experimental study of hot electron dynamics in the narrow band gap dilute nitride alloy, InAs1-xNx, with x up to 0.6%. The sharp increase in the conductivity of n-type InAs1-xNx at applied electric fields above 1 kV/cm demonstrates that impact ionization dominates the hot electron dynamics. This observation, combined with the reduction in the band gap energy by the N-atoms, suggest prospects for the use of this narrow gap alloy in infrared avalanche photodiodes.


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