Negative differential resistance in GaN nanowire network

Dragoman, M.; Konstantinidis, G.; Cismaru, A.; Vasilache, D.; Dinescu, A.; Dragoman, D.; Neculoiu, D.; Buiculescu, R.; Deligeorgis, G.; Vajpeyi, A. P.; Georgakilas, A.
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053116
Academic Journal
Negative differential resistance of gallium nitride nanowire networks deposited on an interdigitated electrode configuration patterned on a silicon dioxide/high resistivity Si substrate is experimentally demonstrated at room temperature. This effect is attributed to tunnelling between crossed gallium nitride nanowires.


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