TITLE

Negative differential resistance in GaN nanowire network

AUTHOR(S)
Dragoman, M.; Konstantinidis, G.; Cismaru, A.; Vasilache, D.; Dinescu, A.; Dragoman, D.; Neculoiu, D.; Buiculescu, R.; Deligeorgis, G.; Vajpeyi, A. P.; Georgakilas, A.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053116
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Negative differential resistance of gallium nitride nanowire networks deposited on an interdigitated electrode configuration patterned on a silicon dioxide/high resistivity Si substrate is experimentally demonstrated at room temperature. This effect is attributed to tunnelling between crossed gallium nitride nanowires.
ACCESSION #
47929027

 

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