Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

Wantae Lim; Douglas, E. A.; Norton, D. P.; Pearton, S. J.; Ren, F.; Young-Woo Heo; Son, S. Y.; Yuh, J. H.
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053510
Academic Journal
We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc-oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (≤100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022–35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μsat) of 1.2 cm2 V-1 s-1, threshold voltage (VTH) of 1.9 V, subthreshold gate-voltage swing (S) of 0.65 V decade-1, and drain current on-to-off ratio (ION/IOFF) of ∼104. These values were only slightly inferior to those obtained from devices on glass substrates (μsat∼2.1 cm2 V-1 s-1, VTH∼0 V, S∼0.74 V decade-1, and ION/IOFF=105–106). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. The ability to achieve InGaZnO TFTs on cyclotene-coated paper substrates demonstrates the enormous potential for applications such as low-cost and large area electronics.


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