Physical device modeling of carbon nanotube/GaAs photovoltaic cells

Hong Li; Wan Khai Loke; Qing Zhang; Yoon, S. F.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p043501
Academic Journal
Photovoltaic response from semiconducting single-walled carbon nanotubes/n-type GaAs heterojunctions has been investigated. We propose a detailed device model of the photovoltaic cell, in which electron transport can be described as follows. The thermionic emission and tunneling through the spike barrier caused by the conduction band discontinuity dominate electron transport under a low and high-forward bias, respectively. In contrast, the dominant transport mechanisms at low and high-reverse bias could be attributed to the direct and Fowler–Nordheim tunneling though a molecular junction, respectively. Within this framework, the current-voltage characteristics of the photovoltaic response can be quantitatively described.


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