TITLE

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

AUTHOR(S)
Muravjov, A. V.; Veksler, D. B.; Popov, V. V.; Polischuk, O. V.; Pala, N.; Hu, X.; Gaska, R.; Saxena, H.; Peale, R. E.; Shur, M. S.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strong plasmon resonances have been observed in the terahertz transmission spectra (1–5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.
ACCESSION #
47807488

 

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