Ternary logic implemented on a single dopant atom field effect silicon transistor

Klein, M.; Mol, J. A.; Verduijn, J.; Lansbergen, G. P.; Rogge, S.; Levine, R. D.; Remacle, F.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p043107
Academic Journal
We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through the device and the transconductance. A read out procedure that allows for voltage gain is proposed. Long numbers can be multiplied by addressing a sequence of Fin-FET transistors in a row.


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