Low hole effective mass in thin InAs nanowires

dos Santos, Cláudia L.; Piquini, Paulo; Lima, Erika N.; Schmidt, Tome M.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p043111
Academic Journal
The efficiency of nanoscale electronic devices usually is limited by the decrease in the carrier mobilities when the dimensionality is reduced. Using first principles calculations our results reveal that the hole effective masses of InAs nanowires decrease significantly below a threshold diameter. The mobilities have been estimated, and it is shown that for an optimal range of diameters, the hole mobilities exceeds the bulk value by up to five times, whereas the electron mobilities remain comparable to the bulk one. These results indicate that there exists a diameter window where p-type InAs based high-speed nanodevices can be fabricated.


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