Understanding the role of tunneling barriers in organic spin valves by hard x-ray photoelectron spectroscopy

Borgatti, F.; Bergenti, I.; Bona, F.; Dediu, V.; Fondacaro, A.; Huotari, S.; Monaco, G.; MacLaren, D. A.; Chapman, J. N.; Panaccione, G.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p043306
Academic Journal
We present an ex situ, nondestructive chemical characterization of deeply buried organic-inorganic interfaces using hard x-ray photoelectron spectroscopy. Co/Alq3 and Co/AlOx/Alq3 interfaces were studied in order to determine the role of a thin (1–2 nm) AlOx interdiffusion barrier in organic spin valves. Interfacial Alq3, 15 nm below the surface, exhibits strong sensitivity to the electronic structure of the interfacial region and to the presence of the AlOx. In addition to reducing Co–Alq3 interdiffusion, we find that the barrier prevents charge donation from the Co to the interfacial Alq3, thus preventing the formation of Alq3 anions within the interface region.


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