Rectifying characteristic of Pt/TiOx/metal/Pt controlled by electronegativity

Zhong, Ni; Shima, Hisashi; Akinaga, Hiro
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042107
Academic Journal
Current voltage characteristic of the TiOx/metal interface has been studied by the systematic investigation on the top electrode (TE) material dependence of the carrier transport through the TiOx/metal interface. Rather than work function of TE ([lowercase_phi_synonym]M), electronegativity (χM) of TE plays a dominant role on current conduction and carrier transport of Pt/TiOx/metal (TE) devices. Pt/TiOx/metal (TE) exhibits rectifying property, if χM of TE is high. On the other hands, a symmetric I-V curves were observed if χM of TE is low. Plots of Schottky barrier at TiOx/metal (TE) interface versus χM of TE provides an index of interface behavior S≈0.55, suggesting partial Fermi-level pinning at TiOx/metal interface.


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