TITLE

Terahertz heterodyne detection with silicon field-effect transistors

AUTHOR(S)
Glaab, Diana; Boppel, Sebastian; Lisauskas, Alvydas; Pfeiffer, Ullrich; Öjefors, Erik; Roskos, Hartmut G.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the detection of electromagnetic radiation at 0.65 THz by silicon field-effect transistors operated in heterodyne mode. Aiming at terahertz imaging with numerous pixels in a focal-plane array, we explore the improvement of the dynamic range achieved over power detection when the local-oscillator (LO) power is distributed quasioptically onto all detectors. These consist of resonantly antenna-coupled complementary metal-oxide-semiconductor transistors with a gate length of 0.25 μm, and each has an integrated voltage amplifier. With a LO power of 2 μW per detector, the noise-equivalent power amounts to 8 fW/Hz, leading to an estimated improvement of the dynamic range by 29 dB.
ACCESSION #
47807461

 

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