Atomic scale characterization of Mn doped InAs/GaAs quantum dots

Bozkurt, M.; Grant, V. A.; Ulloa, J. M.; Campion, R. P.; Foxon, C. T.; Marega Jr., E.; Salamo, G. J.; Koenraad, P. M.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042108
Academic Journal
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent segregation makes it difficult to incorporate Mn in the QDs even at low growth temperatures of T=320 °C and high Mn fluxes. Mn atoms in and around QDs have been observed with strain and potential confinement changing the appearance of the Mn features.


Related Articles

  • Development of a tunable donor quantum dot in silicon. Lee, W. C. T.; Scappucci, G.; Thompson, D. L.; Simmons, M. Y. // Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p043116 

    We have developed a method to integrate a low thermal budget silicon dioxide dielectric in ultrahigh vacuum to surface gate an in-plane gated phosphorus donor quantum dot in silicon. By combining in-plane and top-gate action, the resistance of the quantum dot tunnel barriers can be tuned to...

  • Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules. Bracker, A. S.; Scheibner, M.; Doty, M. F.; Stinaff, E. A.; Ponomarev, I. V.; Kim, J. C.; Whitman, L. J.; Reinecke, T. L.; Gammon, D. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p233110 

    Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. The authors have grown vertically aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the...

  • Double capping of molecular beam epitaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy. Ulloa, J. M.; Koenraad, P. M.; Gapihan, E.; Létoublon, A.; Bertru, N. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p073106 

    Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the double capping process of self-assembled InAs/InP quantum dots (QDs) grown by molecular beam epitaxy on a (311)B substrate. The thickness of the first capping layer is found to play a mayor role in...

  • Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots. Ulloa, J. M.; Koenraad, P. M.; Bonnet-Eymard, M.; Létoublon, A.; Bertru, N. // Journal of Applied Physics;Apr2010, Vol. 107 Issue 7, p074309 

    The influence of a lattice-matched GaAsSb capping layer on the structural properties of self-assembled InAs quantum dots (QDs) grown on InP substrates is studied on the atomic scale by cross-sectional scanning tunneling microscopy. While lattice-matched In0.53Ga0.47As-capped QDs are clearly...

  • Simulation of XSTS Imaging of Self-Assembled Quantum Dot Electronic States. Roy, Mervyn; Maksym, P. A.; Bruls, D. M.; Offermans, P.; Koenraad, P. M. // AIP Conference Proceedings;2003, Vol. 696 Issue 1, p707 

    Recently, STM measurements of cleaved, self assembled quantum dots (SAQDs) have provided important information on the morphology and composition of these buried semiconductor islands. It is also now becoming possible to use STM techniques to image the electronic charge density within the SAQDs....

  • A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure. Ouattara, L.; Mikkelsen, A.; Lundgren, E.; Höglund, L.; Asplund, C.; Andersson, J. Y. // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p044320 

    We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots...

  • Electronic structure of Ge(111)-(2 × 1) surface in the presence of doping atoms. Ab initio analysis of STM data. Savinov, S.; Oreshkin, S.; Maslova, N. // JETP Letters;Jul2011, Vol. 93 Issue 9, p521 

    We present the result of ab initio modeling of the Ge(111)-(2 × 1) surface electronic structure in the presence of donor doping atom at certain position in the surface bilayer of (2 × 1) reconstruction. We briefly compare these results with the data of experimental low temperature STM...

  • Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene. Geringer, V.; Subramaniam, D.; Michel, A. K.; Szafranek, B.; Schall, D.; Georgi, A.; Mashoff, T.; Neumaier, D.; Liebmann, M.; Morgenstern, M. // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082114 

    Using the recently developed technique of microsoldering, we perform systematic transport studies of the influence of polymethylmethacrylate on graphene revealing a doping effect with a n-type dopant density Δn of up to Δn=3.8×1012 cm-2 but negligible influence on mobility and...

  • New formation mechanism of electric field domain due to gamma-X sequential tunneling in.... Yaohui Zhang; Xiaoping Yang // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1148 

    Examines the sequential tunneling of doped weakly coupled GaAs/AlAs superlattices with ground states. Demonstration of high electric field domain; Attribution of electric field domain to gamma-X sequential tunneling; Application of electric field domain of superlattices in designing tunable...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics