TITLE

Atomic scale characterization of Mn doped InAs/GaAs quantum dots

AUTHOR(S)
Bozkurt, M.; Grant, V. A.; Ulloa, J. M.; Campion, R. P.; Foxon, C. T.; Marega Jr., E.; Salamo, G. J.; Koenraad, P. M.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent segregation makes it difficult to incorporate Mn in the QDs even at low growth temperatures of T=320 °C and high Mn fluxes. Mn atoms in and around QDs have been observed with strain and potential confinement changing the appearance of the Mn features.
ACCESSION #
47807453

 

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