Evidence for random networks of diodes in thin films of LaVO3 on SrTiO3 substrates

Razavi, F. S.; Gharetape, S. Jamali; Crandles, D. A.; Christiani, G.; Kremer, R. K.; Habermeier, H.-U.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042110
Academic Journal
Highly conducting interfaces of transition metal oxide heterolayers could provide a promising access to transition metal oxide based electronic devices similar to those based on semiconductor heterostructures. Recently, metallic conductivity has been reported at the LaAlO3/SrTiO3 heterointerface. Here we report the observation of diodelike behavior and the formation of a random diode network in thin films of LaVO3 deposited on as-polished SrTiO3 substrates. Depending on films annealing conditions we observed linear or nonlinear I-V characteristic below 50 K.


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