TITLE

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

AUTHOR(S)
Suri, Rahul; Kirkpatrick, Casey J.; Lichtenwalner, Daniel J.; Misra, Veena
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Energy band alignment and band gap of Al2O3 and HfAlO films grown by atomic layer deposition on 4H–SiC were determined using x-ray photoelectron spectroscopy. Al2O3 exhibited a symmetric band profile with a conduction band offset (ΔEC) of 1.88 eV and a valence band offset (ΔEV) of 1.87 eV. HfAlO yielded a smaller ΔEC of 1.16 eV and ΔEV of 1.59 eV. The higher dielectric constant and higher effective breakdown field of HfAlO compared to Al2O3, coupled with sufficient electron and hole barrier heights, makes it a potential dielectric for use on 4H–SiC, and provokes interest in further investigation of HfAlO/4H–SiC properties.
ACCESSION #
47807447

 

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