TITLE

Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

AUTHOR(S)
Toyoda, S.; Kamada, H.; Tanimura, T.; Kumigashira, H.; Oshima, M.; Ohtsuka, T.; Hata, Y.; Niwa, M.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high-k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high-k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.
ACCESSION #
47807430

 

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