Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well

Syperek, M.; Kudrawiec, R.; Baranowski, M.; Sȩk, G.; Misiewicz, J.; Bisping, D.; Marquardt, B.; Forchel, A.; Fischer, M.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p041911
Academic Journal
Carrier dynamics in In(N)As quantum dots embedded in GaIn(N)As quantum well has been studied by time resolved photoluminescence. We have shown that incorporation of nitrogen into InAs/InGaAs system caused a redshift of the ground state emission due to the change in the energy gap and strain distribution, and simultaneously changed the size and density of dots. This has differently affected the dynamic properties at low and room temperature. Small amount of nitrogen in the InAs/InGaAs quantum dot system has appeared to enhance the quantum confinement allowing to reach 1.3 μm emission and has not deteriorated the optical material quality.


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