Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization

George, Hubert C.; Pierre, Mathieu; Jehl, Xavier; Orlov, Alexei O.; Sanquer, Marc; Snider, Gregory L.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042114
Academic Journal
Negative differential conductance (NDC) is reported in the charging diagram of a normal state metal-metal oxide single electron transistor (SET) fabricated on a quartz substrate. We discuss the physical origin and cause of the observed effect. Using a simple electrostatic model we simulated SET charging diagrams and found excellent correlation between experiment and theory. We also found that the charging pattern associated with trap charging remains the same after warming the sample to room temperature (though position in Vg coordinates changes) and suggest to use these distinct features (such as NDC) as markers to characterize background charge in SETs.


Related Articles

  • Seminumerical simulation of dispersive transport in the oxide of metal-oxide semiconductor devices. Lathi, Seema; Das, Amitava // Journal of Applied Physics;4/15/1995, Vol. 77 Issue 8, p3864 

    Presents information on a study that suggested that understanding and modeling of the device degradation mechanism in a metal-oxide field-effect transistor either due to hot carriers or ionizing radiation require simulation of hole /H[sub+] ion transport in oxides. Simulation approach;...

  • Fast 8 kV metal–oxide semiconductor field-effect transistor switch. Continetti, R. E.; Cyr, D. R.; Neumark, D. M. // Review of Scientific Instruments;Feb1992, Vol. 63 Issue 2, p1840 

    A fast high voltage switch based on ten transformer-isolated power metal–oxide semiconductor field-effect transistors in series is described. This circuit can switch 8 kV to ground with a fall time of ≊230 ns, and has proven to be useful for beam potential re-referencing in pulsed...

  • Effect of tensile stress on the various components of the off current of n-channel metal-oxide-semiconductor transistors. Yang, Peizhen; Lau, W. S.; Ho, V.; Loh, C. H.; Siah, S. Y.; Chan, L. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p073514 

    The authors found that tensile stress actually slightly increases the on current and the subthreshold off current but it slightly decreases the gate leakage current and the drain junction leakage current for n-channel metal-oxide-semiconductor transistors. For short transistors, the subthreshold...

  • Analytical Study of Carrier Statistic in 2-Dimensional Nanoscale P-MOS. Riyadi, Munawar A.; Ahmadi, M. Taghi; Saad, Ismail; Ismail, Razali // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p89 

    The carrier statistics for 2-dimensional (2-D) p-type nanostructure was elaborated, especially for p-MOSFET. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0....

  • Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism. Barraud, Sylvain // Journal of Applied Physics;Sep2009, Vol. 106 Issue 6, p063714-1 

    Various theoretical formulations are proposed for investigating the carrier transport in nanoscale electronic devices. In this paper, a discrete formulation of the Wigner transport equation (WTE) for the self-consistent simulation of phase-coherent quantum transport in silicon nanowire...

  • Subband gap impact ionization and excitation in carbon nanotube transistors. Guo, Jing; Alam, Muhammad A.; Ouyang, Yijian // Journal of Applied Physics;3/15/2007, Vol. 101 Issue 6, p064311 

    Impact excitation (IE) and impact ionization (II) play important roles in carbon nanotube (CNT) optoelectronics and device reliability. The Boltzmann transport equation (BTE) in both the real and k spaces is solved to study subband gap II and IE in a CNT metal-oxide-semiconductor field-effect...

  • Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors. Yeonghun Lee; Kakushima, Kuniyuki; Natori, Kenji; Iwai, Hiroshi // Journal of Applied Physics;2015, Vol. 118 Issue 15, p155105-1 

    We developed a semi-analytical quasi-ballistic transport model for the nanowire metal-oxide-semiconductor field-effect transistors, dealing with finite lengths of source, channel, and drain. For the modeling, we used a combination of one-flux scattering matrices and analytical solutions of...

  • Theory-based transport modeling of the gyro-radius experiments. Kinsey, Jon E.; Bateman, Glenn // Physics of Plasmas;Sep96, Vol. 3 Issue 9, p3344 

    Presents a study that carried out self-consistent predictive transport simulations of temperature and density profiles for ten dimensionally similar low mode discharges. Combination of theoretically derived transport models; Weiland model for transport due to drift waves; Ion temperature...

  • Radio frequency discharge modeling: Moment equations approach. Meyyappan, M.; Govindan, T. R. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2250 

    Presents a study which featured a fluid model based on the three moments of Boltzmann equation to examine radio frequency discharges. Models for plasma- based processes; Description of the fluid model; Demonstration of the model for electropositive discharges.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics