Probing atomic rearrangement events in resistive switching nanostructures

Ventura, J.; Araujo, J. P.; Sousa, J. B.; Liu, Y.; Zhang, Z.; Freitas, P. P.
January 2010
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p043505
Academic Journal
Resistive switching in metal-insulator-metal structures is being investigated aiming next generation nonvolatile memories. We studied the time evolution of the electrical resistance (R) of Ta/AlOx/Ta nanostructures displaying resistive switching. At low temperature and in the early switching stages we find rapid R-variations. However, as time proceeds, one sees R-jumps between terraces through different processes, such as discontinuous steps, two level, or dumped fluctuations. Furthermore, a wealth of active fluctuators is visible even after the current leads to no net resistance variations. This is reinforced at high temperatures, where the fluctuating rate and number of active fluctuators lead to complex signals.


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