TITLE

Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1-xN/GaN heterostructures

AUTHOR(S)
Young, Erin C.; Romanov, Alexey E.; Gallinat, Chad S.; Hirai, Asako; Beltz, Glenn E.; Speck, James S.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p041913
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlxGa1-xN films grown on nonpolar m {1100} and {1122} semipolar orientations of freestanding GaN substrates were investigated over a range of stress states (x≤0.17). Cracking on the (0001) plane was observed beyond a critical thickness in the {1100} oriented films, while no cracking was observed for {1122} films. Theoretical analysis of tensile stresses in AlxGa1-xN for the relevant planes revealed that anisotropy of in-plane biaxial stress for the nonpolar {1100} planes results in the highest normal stresses on the c-planes, consistent with experimental observations. Shear stresses are significant in the semipolar case, suggesting that misfit dislocation formation provides an alternative mechanism for stress relief.
ACCESSION #
47807413

 

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