Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks

Larionova, Yevgeniya; Mertens, Verena; Harder, Nils-Peter; Brendel, Rolf
January 2010
Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p032105
Academic Journal
The surface passivation properties of thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks on 2.5 Ω cm n-type Czochralski silicon substrates have been investigated. By annealing these stacks in air we achieve surface recombination velocities (SRV) lower than 2.4 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration. We also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2 thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO2/SiN stacks after storage in the dark for several weeks.


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