Electrical properties of C-doped p-type GaP and GaPN grown by molecular beam epitaxy

Zhengxin Liu; Kawanami, Hitoshi; Sakata, Isao
January 2010
Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p032106
Academic Journal
The electrical properties of C-doped p-type GaP and GaPN epilayers grown by molecular beam epitaxy using CBr4 as a doping source have been investigated. C is shown to be a relatively shallow acceptor both in GaP and GaPN, with the activation energy in the regions of 16–33 and 18–35 meV, respectively. GaP demonstrates ordinary conduction characteristics, whereas GaPN has a typical mixed conduction effect and the impurity conduction becomes dominant at low temperatures. It is conjectured that impurity conduction and ionized impurity scattering mechanisms in GaPN may be related to the inactivated C and N radicals.


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