Mo incorporation in WO3 thin film photoanodes: Tailoring the electronic structure for photoelectrochemical hydrogen production

Bär, M.; Weinhardt, L.; Marsen, B.; Cole, B.; Gaillard, N.; Miller, E.; Heske, C.
January 2010
Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p032107
Academic Journal
The electronic surface structure of Mo-incorporated WO3 (“WO3:Mo”) is investigated using direct and inverse photoemission and compared to that of pure (Mo-free) WO3. The films are found to be n-type with an electronic surface band gap of 3.27 (±0.15) eV. The conduction band minimum (valence band maximum) is 0.64 (±0.10) eV above [2.63 (±0.10) eV below] the Fermi level and at most 0.38 (±0.11) eV above the H+/H2 reduction potential [at least 1.66 (±0.11) eV below the H2O/O2 oxidation potential]. The findings suggest an explanation why WO3:Mo/WO3 bilayer structures show improved photoelectrochemical performance compared to respective single layer photoanodes.


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