Sol-gel deposition and piezoelectric properties of {110}-oriented Pb(Zr0.52Ti0.48)O3 thin films

Ambika, D.; Kumar, Viswanathan; Imai, Hideyuki; Kanno, Isaku
January 2010
Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p031909
Academic Journal
Pb(ZrxTi1-x)O3 [PZT] thin films of thickness 2.0 μm were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a sol-gel spin-coating technique. PZT films on substrates with a strontium titanate bottom layer are preferentially {110}-oriented with a columnar structure. The PZT films exhibit good dielectric properties with a dielectric permittivity, [variant_greek_epsilon]r=1545 and dielectric loss, tan δ=0.04. Excellent piezoelectric characteristics are also exhibited by the {110}-oriented films with an average effective transverse piezocoefficient, e31* of -8.4 C/m2. The influence of film texture and composition on the transverse piezocoefficient have also been studied.


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