TITLE

Contrast inversion of the apparent barrier height of Pb thin films in scanning tunneling microscopy

AUTHOR(S)
Becker, Michael; Berndt, Richard
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p033112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Scanning tunneling microscopy measurements of the apparent height of the tunneling barrier are analyzed for Pb islands on Ag(111). The apparent barrier height (ABH) significantly varies with the bias voltage. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of the ABH. Using model calculations, these variations are interpreted in terms of the strongly modulated local density of states of thin Pb films, which is caused by quantum well states.
ACCESSION #
47680095

 

Related Articles

  • Scanning tunnelling microscopy and electronic structure of Mn clusters on Ag(111). Kliewer, J.; Berndt, R.; Minár, J.; Ebert, H. // Applied Physics A: Materials Science & Processing;Jan2006, Vol. 82 Issue 1, p63 

    Small Mn clusters (Mn1-Mn4) are prepared by manipulation of Mn adatoms on Ag(111) with the tip of a scanning tunnelling microscope. The apparent heights of the clusters are observed to increase monotonously from 1.6 Ã… for a monomer to 2.2 Ã… for a tetramer. Self-consistent calculations of...

  • Electromigration of single metal atoms observed by scanning tunneling microscopy. Braun, K.-F.; Soe, W.-H.; Flipse, C. F. J.; Rieder, K.-H. // Applied Physics Letters;1/8/2007, Vol. 90 Issue 2, p023118 

    The authors show in this letter that single metal atoms on a Ni(111) surface can be pushed by electromigration forces from a scanning tunneling microscope tip. This repulsive interaction is observed over a length scale of 6 nm. While for voltages above -300 mV the atoms are pulled by the...

  • Two-dimensional connective nanostructures of electrodeposited Zn on Au (111) induced by spinodal decomposition. Dogel, J.; Tsekov, R.; Freyland, W. // Journal of Chemical Physics;3/1/2005, Vol. 122 Issue 9, p094703 

    Phase formation of surface alloying by spinodal decomposition has been studied at an electrified interface. For this aim Zn was electrodeposited on Au(111) from the ionic liquid AlCl3-MBIC (58:42) containing 1 mM Zn(II) at different potentials in the underpotential range corresponding to...

  • Spatial mapping of the inverse decay length using scanning tunneling microscopy. de Vries, R. J.; Saedi, A.; Kockmann, D.; van Houselt, A.; Poelsema, B.; Zandvliet, H. J. W. // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p174101 

    We present a scanning tunneling spectroscopy technique that allows one to make spatial maps of the characteristic length, i.e., the inverse decay length (κ), in electron tunneling. The method requires that the tunneling current i and its first and second derivative with distance di/dz and...

  • Giant optical field enhancement in multi-dielectric stacks by photon scanning tunneling microscopy. Ndiaye, C.; Zerrad, M.; Lereu, A. L.; Roche, R.; Dumas, Ph.; Lemarchand, F.; Amra, C. // Applied Physics Letters;9/23/2013, Vol. 103 Issue 13, p131102 

    Dielectric optical thin films, as opposed to metallic, have been very sparsely explored as good candidates for absorption-based optical field enhancement. In such materials, the low imaginary part of the refractive index implies that absorption processes are usually not predominant. This leads...

  • Scanning-tunneling-microscopy observation of heterojunctions with a type-II band alignment in ZnSe/BeTe multiple quantum wells. Yamakawa, I.; Akanuma, Y.; Akimoto, R.; Nakamura, A. // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p153112 

    Heterojunctions of ZnSe/BeTe multiple quantum wells (MQW) with a type-II band alignment have been investigated by cross-sectional scanning tunneling microscopy (STM). The brightness of the ZnSe and BeTe layers in the cross-sectional STM image is inverted between filled- and empty-state images,...

  • Composition Profile of MOVPE Grown InP/InGaAs/InP Quantum Well Structures Studied by Cross-Sectional Scanning Tunneling Microscopy. Yamakawa, I.; Akanuma, Y.; Lee, W. S.; Ujihara, T.; Takeda, Y.; Nakamura, A. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p117 

    Interfacial properties of InP/In0.53Ga0.47As/InP quantum well structures grown by metalorganic vapor phase epitaxy have been investigated by means of cross-sectional scanning tunneling microscopy (XSTM). Composition profiles of Ga and As atoms derived from XSTM images reveal the formation of the...

  • Structure of incommensurate gold sulfide monolayer on Au(111). Quek, Su Ying; Biener, Monika M.; Biener, Juergen; Bhattacharjee, Joydeep; Friend, Cynthia M.; Waghmare, Umesh V.; Kaxiras, Efthimios // Journal of Chemical Physics;9/14/2007, Vol. 127 Issue 10, p104704 

    We develop an atomic-scale model for an ordered incommensurate gold sulfide (AuS) adlayer which has previously been demonstrated to exist on the Au(111) surface, following sulfur deposition and annealing to 450 K. Our model reproduces experimental scanning tunneling microscopy images. Using...

  • Manipulation at a distance: Atomic-scale observation of ballistic electron transport in single layer graphene. Yang, H.; Mayne, A. J.; Cejas, C.; Dujardin, G.; Kuk, Y. // Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p223104 

    We present scanning tunneling microscopy manipulation experiments on epitaxial graphene and the carbon buffer layer grown on hexagonal silicon carbide. Low voltage pulses applied to the graphene layer with the microscope tip induce nonlocal modifications of a bare carbon buffer region 10 nm...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics