TITLE

Influence of length and measurement geometry on magnetoimpedance in La0.7Sr0.3MnO3

AUTHOR(S)
Rebello, A.; Mahendiran, R.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p032502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We show that ac magnetoresistance at room temperature in La0.7Sr0.3MnO3 is extremely high (≈-47% in μ0H=100 mT, f=3–5 MHz), and magnetic field dependence of reactance exhibits a double peak behavior. However, magnitudes of the ac magnetoresistance and magnetoreactance for a fixed length of the sample (li) decrease with decreasing separation (lv) between voltage probes unlike the dc magnetoresistance. On the contrary, change in li has a negligible influence on magnetoimpedance when lv is fixed. Our results indicate that high frequency electrical transport is sensitive to local variations in the magnetic permeability.
ACCESSION #
47680086

 

Related Articles

  • Negative magnetoresistance in SiC heteropolytype junctions. Lebedev, Alexander Alexandrovich; Abramov, P. L.; Agrinskaya, N. V.; Kozub, V. I.; Kuznetsov, A. N.; Lebedev, S. P.; Oganesyan, G. A.; Sorokin, L. M.; Chernyaev, A. V.; Shamshur, D. V. // Journal of Materials Science: Materials in Electronics;Aug2008, Vol. 19 Issue 8/9, p793 

    In this study, we carried out for the first time a galvanomagnetic investigation of 3C–SiC/6H–SiC heterostructures at liquid-helium temperatures and observed in n-3C–SiC low resistance of the samples and the appearance of a negative magnetoresistance in weak fields (~1 T)....

  • Magnetoresistance of UPt3. T. Lippman; J. Davis; H. Choi; J. Pollanen; W. Halperin // Journal of Low Temperature Physics;Sep2007, Vol. 148 Issue 5/6, p863 

    Abstract   We have performed measurements of the temperature dependence of the magnetoresistance up to 9 T in bulk single crystals of UPt3 with the magnetic field along the b-axis, the easy magnetization axis. We have confirmed previous results for transverse...

  • Junction area dependence of breakdown characteristics in magnetic tunnel junctions. Kim, Kwang-Seok; Cho, B. K.; Kim, T. W.; Park, W. J. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p8364 

    Breakdown characteristics of the magnetic tunnel junctions (MTJ) with different junction areas of S = 200 μm[SUP2] and S = 0.5 μm[SUP2] are investigated under constant voltage stress. The breakdown process is found to be quite different for the two junction areas. For the large junctions...

  • Theory of oscillatory tunneling magnetoresistance. Lee, B. C. // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C708-1 

    An analytical form of the oscillatory tunneling magnetoresistance (TMR) is obtained for a magnetic tunnel junction with a single-crystal nonmagnetic layer inserted. The full-band structures are taken into account and the TMR is expressed with spin-dependent reflection amplitudes at the Fermi...

  • Angular dependence of the exchange bias direction and giant magnetoresistance on different cooling-field strengths. Son, Jangyup; Lee, Soogil; Kim, Sanghoon; Han, Yoonsung; Hong, Jongill // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07D721 

    We studied the effect of different cooling-field strengths on the exchange bias by measuring the angular-dependent sheet resistance and the giant magnetoresistance of exchange-biased spin valves using a PtMn antiferromagnetic and a synthetic antiferromagnetic layer. When we annealed the spin...

  • n-type conductivity in ultrananocrystalline diamond films. Williams, Oliver A.; Curat, Stephen; Gerbi, Jennifer E.; Gruen, Dieter M.; Jackman, Richard B. // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1680 

    Hall effect measurements have been carried out to determine the carrier density and mobilities in ultrananocrystalline diamond films grown with added nitrogen. The results show clear n-type conductivity with very low thermal activation energy. Mobility values of 1.5 cm2 V-1 s-1 are found for a...

  • Galvanomagnetic Effects "Sensors based on Hall Effect". Petousis, Vlassis N.; Dimitropoulos, Panagiotis D. // Journal of Engineering Science & Technology Review;2009, Vol. 2 Issue 1, p1 

    The Hall effect is the generation of a transverse electromotive force in a sample carrying an electric current and exposed to perpendicular magnetic field. Depending on the sample geometry, this electromotive force may cause the appearance of a transverse voltage across the sample, or a current...

  • Spin transfer switching of current-perpendicular-to-plane giant magnetoresistance devices with Gd-Fe free layers and Ag-spacer materials for light modulator applications. Aoshima, K.; Ohtsuka, Y.; Hashimoto, Y.; Funabashi, N.; Machida, K.; Kuga, K.; Kikuchi, H.; Shimidzu, N. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07C917 

    We investigated how the magneto-optical (MO) and magnetic properties of Gd-Fe-based giant magneto resistance (GMR) films with silver (Ag) spacers are affected using two different free-layer compositions, Gd21.7Fe78.3 and Gd27.5Fe72.5 (at. %). GMR films using Ag spacers exhibited a MO Kerr...

  • Low-current-density spin-transfer switching in Gd22Fe78-MgO magnetic tunnel junction. Hidekazu Kinjo; Kenji Machida; Koichi Matsui; Ken-ichi Aoshima; Daisuke Kato; Kiyoshi Kuga; Hiroshi Kikuchi; Naoki Shimidzu // Journal of Applied Physics;2014, Vol. 115 Issue 20, p203903-1 

    Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0×106 A/cm2 using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560x560 nm2 in size, the devices exhibited a tunneling...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics