W18O49 Nanowires as Ultraviolet Photodetector

Feng Yang; Kai Huang; Shibing Ni; Qi Wang; Deyan He
February 2010
Nanoscale Research Letters;Feb2010, Vol. 5 Issue 2, p416
Academic Journal
Photodetectors in a configuration of field effect transistor were fabricated based on individual W18O49 nanowires. Evaluation of electrical transport behavior indicates that the W18O49 nanowires are n-type semiconductors. The photodetectors show high sensitivity, stability and reversibility to ultraviolet (UV) light. A high photoconductive gain of 104 was obtained, and the photoconductivity is up to 60 nS upon exposure to 312 nm UV light with an intensity of 1.6 mW/cm2. Absorption of oxygen on the surface of W18O49 nanowires has a significant influence on the dark conductivity, and the ambient gas can remarkably change the conductivity of W18O49 nanowire. The results imply that W18O49 nanowires will be promising candidates for fabricating UV photodetectors.


Related Articles

  • Photoconductivity in single AlN nanowires by subband gap excitation. Huang, H. M.; Chen, R. S.; Chen, H. Y.; Liu, T. W.; Kuo, C. C.; Chen, C. P.; Hsu, H. C.; Chen, L. C.; Chen, K. H.; Yang, Y. J. // Applied Physics Letters;2/8/2010, Vol. 96 Issue 6, p062104 

    Photoconductivity of individual aluminum nitride (AlN) nanowires has been characterized using different subband gap excitation sources. It is interesting that both positive (under 1.53 and 2.33 eV excitations) and negative (under 3.06 and 3.81 eV excitations) photocurrent responses are observed...

  • Pre-avalanche Ultraviolet Photoconduction Properties of Transitional-Metal-Doped ZnO Nanowires. Kouklin, N.; Omari, M.; Gupta, A.; Sen, S. // Journal of Electronic Materials;Apr2009, Vol. 38 Issue 4, p596 

    The ultraviolet (UV) photoelectric characteristics of transitional metal (Cu) doped ZnO nanowires produced by the self-catalytic vapor–liquid–solid (VLS) method were investigated by performing a series of photoconduction and time-resolved measurements. The photocurrent voltage...

  • Ultraviolet emission from high-quality crystalline ultra-long AlN whiskers. Zuo, Sibin; Zhang, Haiyun; Wang, Jun; Wang, Wenjun // Powder Diffraction;Mar2014, Vol. 29 Issue 1, p3 

    We report here the fabrication and characterization of ultra-long AlN whiskers by physical vapor transport method. The obtained whiskers are 1–3 µm in diameter and up to millimeters in length. The whiskers grow along the [0001] crystallographic direction and are well crystallized. They...

  • Tiny nanowires make sensitive photodetectors.  // Laser Focus World;Nov2008, Vol. 44 Issue 11, p15 

    The article discusses the study conducted by researchers at the University of California, which fabricated planar and vertical silicon nanowire photodetectors using an etching process and reported the measurement of significant phototransitive gain. It characterizes the optical response of the...

  • Narrow-band metal-oxide-semiconductor photodetector. Ho, W. S.; Lin, C.-H.; Cheng, T.-H.; Hsu, W. W.; Chen, Y.-Y.; Kuo, P.-S.; Liu, C. W. // Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG 

    Si-based photodetectors for narrow-band ultraviolet light (319 nm) and green light (500 nm) detection are demonstrated using a metal-oxide-semiconductor tunneling structure. By using appropriate selection of gate metal, the metal-oxide-semiconductor tunneling diode can detect specific range of...

  • A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering. Zhen Bi; Jingwen Zhang; Xuming Bian; Dong Wang; Xin'an Zhang; Weifeng Zhang; Xun Hou // Journal of Electronic Materials;May2008, Vol. 37 Issue 5, p760 

    A high-performance metal-semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a ZnO film with Al interdigitated (IDT) electrodes. A c-axis-oriented ZnO film was grown on a SiO2/Si (100) substrate at room temperature by a reactive radiofrequency (RF) sputtering technique...

  • TiO2 nanoparticles and silicon nanowires hybrid device: Role of interface on electrical, dielectric, and photodetection properties. Rasool, Kamran; Rafiq, M. A.; Ahmad, Mushtaq; Imran, Z.; Hasan, M. M. // Applied Physics Letters;12/17/2012, Vol. 101 Issue 25, p253104 

    We report ∼12, 5, 12, 100, and 70 times enhancement of external quantum efficiency, detectivity, responsivity, AC conductivity, and overall dielectric constant ([variant_greek_epsilon]′), respectively of hybrid silicon nanowires (SiNWs) and titania (TiO2) nanoparticles (NPs) device as...

  • Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires. Chen, R. S.; Lu, C. Y.; Chen, K. H.; Chen, L. C. // Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p233119 

    We report the strong molecular effects on the surface-dominant photoconductivity with high-gain transport in the polar GaN nanowires. Both the transient and steady-state photocurrents are sensitive and selective to the adsorptions of oxygen and hydrogen. The surface band bending of GaN nanowires...

  • Role of defects in the anomalous photoconductivity in ZnO nanowires. Bera, A.; Basak, D. // Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p163119 

    The anomalous photocurrent decay in aqueous solution grown ZnO nanowires (NWs) under steady ultraviolet light illumination have been investigated. The photocurrent growth-decay measurements using the above-band and subband gap light excitation energies in the as-grown and annealed NWs show that...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics