TITLE

Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry

AUTHOR(S)
Lim, Seung-Gu; Jackson, Thomas N.; Mitchel, W. C.; Bertke, R.; Freeouf, J. L.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/9/2001, Vol. 79 Issue 2
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have developed a far UV spectroscopic ellipsometer system working up to 9 eV, and applied it to the characterization of three 4H-SiC samples with different surface conditions [i.e., as-received and chemical mechanical processing (CMP) processed 4H-SiC bulk substrates and a 4H-SiC epi sample]. Pseudodielectric functions &Vegr;[sub 1] and &Vegr;[sub 2] clearly demonstrate the excellent surface sensitivity of the far UV ellipsometry system as it distinguishes the improvements provided by CMP process. Simulation results of ellipsometer data indicate the existence of a damaged subsurface layer in the as-received 4H-SiC bulk substrate. The investigation of sample surfaces using atomic force microscopy confirms the results of ellipsometry measurements. © 2001 American Institute of Physics.
ACCESSION #
4759014

 

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