TITLE

Lateral heterogeneity in the surface composition after laser processing of Ti/Si interface contaminated with oxygen

AUTHOR(S)
Larciprete, R.; Danailov, A.; Barinov, A.; Casalis, L.; Gregoratti, L.; Kiskinova, M.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/9/2001, Vol. 79 Issue 2
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The lateral variations in the surface composition of an oxygen-contaminated Ti/Si(001) interface processed by pulsed laser annealing were investigated by synchrotron radiation x-ray photoemission spectromicroscopy. It has been found that SiO[sub 2], which segregates on top of the Ti silicide film, appears only in a circular edge region of the laser spots and is completely absent in the hotter internal area, where SiO evaporation has occurred. The results demonstrate that the temperature gradient within the laser-irradiated area can affect substantially the lateral homogeneity of the fabricated interfaces, an important issue for microdevice technology. © 2001 American Institute of Physics.
ACCESSION #
4759004

 

Related Articles

  • Delineation of semiconductor doping by scanning resistance microscopy. Shafai, C.; Thomson, D.J. // Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p342 

    Examines the delineation of semiconductor junctions. Use of scanning resistance microscopy (SRM) in delineation; Application of conducting probe by SRM to measure localized surface resistance; Importance of measurements in doping type and concentration delineation; Correlation between...

  • Effect of low-temperature preannealing on laser-annealed p[sup +]/n ultrashallow junctions. Baek, Sungkweon; Jang, Taesung; Hwang, Hyunsang // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2272 

    The effect of low-temperature preannealing on ultrashallow p[sup +]/n junctions was examined. An ultrashallow junction was formed by means of B[sub 2]H[sub 6] plasma doping at an energy of 500 V. The junction was activated by low-temperature (300-500 °C) annealing, followed by laser...

  • About the Effect of Heating Temperature on the Structure and Phase Composition of Submicrocrystalline Alloy AMts. Chikova, O.; Shishkina, E.; Petrova, A.; Brodova, I. // Metal Science & Heat Treatment;Jul2014, Vol. 56 Issue 3/4, p188 

    Variation of microstructure in the process of annealing of submicrocrystalline alloy AMts obtained by the method of severe plastic deformation is studied. The specimens are heated directly on the object stage of an NTEGRA Therma scanning probe microscope.

  • Nanolocalized charge writing in thin SiO2 layers with embedded silicon nanocrystals under an atomic force microscope probe. Dunaevskii, M. S.; Titkov, A. N.; Larkin, S. Yu.; Speshilova, A. B.; Aleksandrov, S. E.; Bonafos, C.; Claverie, A.; Laiho, R. // Technical Physics Letters;Oct2007, Vol. 33 Issue 10, p889 

    The possibility of temporally stable nanolocalized charging of thin SiO2 layers with embedded silicon nanocrystals (nc-Si) is demonstrated. The local charge writing and reading in SiO2 layers were performed using the electrostatic force microscopy (EFM) technique under the probe of an atomic...

  • C60 cluster formation at interfaces with pentacene thin-film phases. Conrad, B. R.; Tosado, J.; Dutton, G.; Dougherty, D. B.; Jin, W.; Bonnen, T.; Schuldenfrei, A.; Cullen, W. G.; Williams, E. D.; Reutt-Robey, J. E.; Robey, S. W. // Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p213302 

    The C60-thin film pentacene interface was investigated using scanning tunneling microscopy, atomic force microscopy, and ultraviolet photoemission spectroscopy. C60 deposition on a multilayer pentacene film (standing) yields an interface dominated by C60 clusters, regardless of the underlying...

  • Atomic-scale observation of interfacial roughness and As–P exchange in InGaAs/InP multiple quantum wells. Yamakawa, I.; Oga, R.; Fujiwara, Y.; Takeda, Y.; Nakamura, A. // Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4436 

    Cross-sectional scanning tunneling microscopy (XSTM) has been used to study interfacial properties of InP-on-InGaAs interfaces in InGaAs/InP multiple quantum wells grown by metalorganic vapor phase epitaxy with a growth interruption. XSTM has enabled us to separately identify step-like roughness...

  • Corrosion: Peering below the surface. Ryan, Mary // Nature Materials;Oct2004, Vol. 3 Issue 10, p663 

    Examines the formation and self-assembly of clusters of vacancies at a metal-oxide interface. Detachment of oxide layers at high temperature; Use of bias-voltage-dependent scanning tunneling microscopy; Provision of clues as to how such interfaces may be stabilized.

  • Atomic force microscope imaging and force measurements at electrified and actively corroding interfaces: Challenges and novel cell design. Valtiner, Markus; Ankah, Genesis Ngwa; Bashir, Asif; Renner, Frank Uwe // Review of Scientific Instruments;Feb2011, Vol. 82 Issue 2, p023703 

    We report the design of an improved electrochemical cell for atomic force microscope measurements in corrosive electrochemical environments. Our design improvements are guided by experimental requirements for studying corrosive reactions such as selective dissolution, dealloying, pitting...

  • Interfacial characteristics of N[sub 2]O and NO nitrided SiO[sub 2] grown on SiC by rapid.... Hui-feng Li; Dimitrijev, Sima // Applied Physics Letters;4/14/1997, Vol. 70 Issue 15, p2028 

    Investigates the interfacial characteristics of nitrous oxide (N[sub 2]O) and nitric oxide (NO) annealed silicon dioxide grown on silicon carbide. Application of rapid thermal processing; Effect of NO on the interface formed during oxidation; Influence of N[sub 2]O annealing on the interface...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics