TITLE

Nitrogen-related complexes in gallium arsenide

AUTHOR(S)
Lowther, J. E.; Estreicher, S. K.; Temkin, H.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/9/2001, Vol. 79 Issue 2
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A first-principles pseudopotential method has been used to study some potentially important metastable defects in N-doped GaAs. Formation energies have been obtained and related to those of As and Ga vacancies in the intrinsic material. Of the structures considered, two are identified that crucially depend on overall material stoichiometry. These are N on a Ga site (N[sub Ga]) or a NN dimer on an As site (NN[sub As]). N[sub Ga] has a partly shallow energy-level structure with a fully occupied level lying near the valence-band edge, whereas NN[sub As] has localized character with a midgap deep level. Both defects may be responsible for the onset of a reduction in the apparent band gap that has been recently observed in heavily N-doped GaAs prior to alloying. © 2001 American Institute of Physics.
ACCESSION #
4759000

 

Related Articles

  • High resistivity and picosecond carrier lifetime of GaAs implanted with MeV Ga ions at high.... Jagadish, C.; Tan, H.H. // Applied Physics Letters;9/18/1995, Vol. 67 Issue 12, p1724 

    Investigates high resistivity and picosecond carrier lifetime of gallium arsenide (GaAs) implanted with megaelectronVolt gallium ions at high fluences. Strain field exhibited by the implanted samples; Effects of annealing the samples at the temperature of 600 degrees Celsius; Optoelectronic...

  • High-speed, optically controlled surface-normal optical switch based on diffusive conduction. Yairi, M.B.; Coldren, C.W.; Miller, D.A.B.; Harris Jr., J.S. // Applied Physics Letters;8/2/1999, Vol. 75 Issue 5, p597 

    Reports on a surface-normal optically controlled optoelectronic modulator made from a reversed biased p-i (multiple quantum well)-n GaAs/AlGaAs structure with ultrathin barriers whose recovery time is based on diffusive conduction. Demonstration of modulation of reflectivity; Modulated changes...

  • Transistor-based studies of heavy doping effects in n-GaAs. Patkar, M.P.; Lundstrom, M.S.; Melloch, M.R. // Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1853 

    Investigates the heavy doping effects in n-gallium arsenide (GaAs). Measurement of the collector current as a function of the emitter-base forward bias voltage; Extraction of the ideality factor; Factor to consider in the designing GaAs bipolar devices.

  • Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy. Abernathy, C. R.; Pearton, S. J.; Caruso, R.; Ren, F.; Kovalchik, J. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1750 

    Recent advances in heterostructure bipolar transistor technology have created a need for p-type doping at levels ≥1020 cm-3. Furthermore, such levels may eliminate the need for alloying during ohmic contact formation. We have achieved p-type doping levels as high as 5×1020 cm-3 using...

  • Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs. Kim, B. W.; Majerfeld, A. // Journal of Applied Physics;2/15/1996, Vol. 79 Issue 4, p1939 

    Deals with a study which presented two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type gallium arsenide. Solution of the Boltzmann equations for the interacting two-band system; Details on the effective relaxation time method; Formulas for the inverse relaxation...

  • Anomalous mobility enhancement in heavily carbon-doped GaAs. Chen, H. D.; Feng, M. S.; Lin, K. C.; Chen, P. A.; Wu, C. C.; Wu, J. W. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p5453 

    Presents a study concerning the anomalous mobility enhancement in heavily carbon-doped gallium arsenide. Methodology; Results of the study; Conclusion.

  • Spatial variation of activation energy in undoped high-resistivity bulk GaAs. Reichel, C.; Siegel, W. // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p912 

    Presents information on a study which focused on the spatial measurements and wafer mapping of activation energies of undoped semi-insulating gallium arsenide (GaAs). Experimental details; Results and discussion; Conclusions.

  • A comprehensive thermodynamic analysis of native point defect and dopant solubilities... Hurle, D.T.J. // Journal of Applied Physics;5/15/1999, Vol. 85 Issue 10, p6957 

    Presents a detailed analysis of the role of charged native point defects in controlling the solubility of electrically active dopants in gallium arsenide. Donor doping and its historical interpretation; Tellurium doping; Zinc doping; Germanium doping; Summary.

  • Modeling and Simulation of 2-D GaAs MESFET under Illumination. Mishra, B. K.; Jolly, Lochan; Patil, Kalawati // International Journal on Recent Trends in Engineering & Technolo;Nov2010, Vol. 4 Issue 3, p120 

    A two dimensional numerical model of an optically gated GaAs MESFET with non uniform doping has been developed for the characterization of the device as a photo detector. First the photo induced voltage (Vop) at the Schottky gate contact is calculated for estimating the channel profile. The...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics