Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

Cho, H. K.; Lee, J. Y.; Yang, G. M.; Kim, C. S.
July 2001
Applied Physics Letters;7/9/2001, Vol. 79 Issue 2
Academic Journal
V-defect formation of the In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells (MQWs) grown on GaN layers with different threading dislocation (TD) densities was investigated. From cross-sectional transmission electron microscopy, we found that all V defects are not always connected with TDs at their bottom. By increasing the indium composition in the In[sub x]Ga[sub 1-x]N well layer or decreasing the TD density of the thick GaN layer, many V defects are generated from the stacking mismatch boundaries induced by stacking faults which are formed within the MQW due to the strain relaxation. Also, TD density in the thick GaN layer affects not only the origin of V-defect formation but also the critical indium composition of the In[sub x]Ga[sub 1-x]N well on the formation of V defects. © 2001 American Institute of Physics.


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