TITLE

Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

AUTHOR(S)
Cho, H. K.; Lee, J. Y.; Yang, G. M.; Kim, C. S.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/9/2001, Vol. 79 Issue 2
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
V-defect formation of the In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells (MQWs) grown on GaN layers with different threading dislocation (TD) densities was investigated. From cross-sectional transmission electron microscopy, we found that all V defects are not always connected with TDs at their bottom. By increasing the indium composition in the In[sub x]Ga[sub 1-x]N well layer or decreasing the TD density of the thick GaN layer, many V defects are generated from the stacking mismatch boundaries induced by stacking faults which are formed within the MQW due to the strain relaxation. Also, TD density in the thick GaN layer affects not only the origin of V-defect formation but also the critical indium composition of the In[sub x]Ga[sub 1-x]N well on the formation of V defects. © 2001 American Institute of Physics.
ACCESSION #
4758995

 

Related Articles

  • Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. Volz, K.; Torunski, T.; Rubel, O.; Stolz, W.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p083504 

    III/V semiconductors containing dilute amounts of nitrogen are metastable and need to be thermally treated after growth to optimize optoelectronic properties. The influence of thermal annealing on the nitrogen depth profile in metal organic vapor phase epitaxygrown Ga(NAs)/GaAs as well as...

  • Role of gross well-width fluctuations in bright, green-emitting single InGaN/GaN quantum well structures. van der Laak, Nicole K.; Oliver, Rachel A.; Kappers, Menno J.; Humphreys, Colin J. // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p121911 

    Gross well-width fluctuations have been observed by transmission electron microscopy (TEM) in single InGaN/GaN quantum wells (QWs) grown by metal-organic vapor phase epitaxy. Similar thickness variations are observed in commercial, green InGaN/GaN multi-QW light emitting diodes. Atomic force...

  • The effect of coupling barrier thickness on structural and optical properties in asymmetrically coupled GaN/Al0.5Ga0.5N/GaN multiquantum wells. Park, Young S.; Park, Chang Mo; Hwang, Bo Ra; Kang, T. W.; Kim, Yongmin; Im, Hyunsik; Han, Myung-Soo // Journal of Applied Physics;Nov2007, Vol. 102 Issue 10, p103511 

    The structural and optical properties of coupled, multiquantum-well structures, consisting of GaN(10 Ã…)/Al0.5Ga0.5N(12 or 22 Ã…)/GaN(20 Ã…) bounded by Al0.5Ga0.5N (100 Ã…) barriers, were investigated by high resolution x-ray diffraction, transmission electron microscopy, and...

  • Anomalous temperature characteristics of single wide quantum well InGaN laser diode. Świetlik, T.; Franssen, G.; Wiśniewski, P.; Krukowski, S.; Łepkowski, S. P.; Marona, L.; Leszczyński, M.; Prystawko, P.; Grzegory, I.; Suski, T.; Porowski, S.; Perlin, P.; Czernecki, R.; Bering-Staniszewska, A.; Eliseev, P. G. // Applied Physics Letters;2/13/2006, Vol. 88 Issue 7, p071121 

    By using an atypically wide quantum well (95 Ã…) in the active layer of InGaN violet light emitting laser diode, we managed to fabricate a device characterized by very high thermal stability of the threshold current. The characteristic T0 temperature was measured to be 302 K, which is the...

  • Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets. Yeh, Ting-Wei; Lin, Yen-Ting; Ahn, Byungmin; Stewart, Lawrence S.; Daniel Dapkus, P.; Nutt, Steven R. // Applied Physics Letters;1/16/2012, Vol. 100 Issue 3, p033119 

    We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy....

  • Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells. Nishinaka, Junichi; Funato, Mitsuru; Kawakami, Yoichi // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p033513 

    We investigate anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells (MQWs). Transmission electron microscopy analyses of semipolar [formula] MQWs reveal that lattice relaxation preferentially occurs along the [formula] direction by introducing misfit dislocations (MDs)...

  • The formation of quantum dot structures in 30-pair InGaN/GaN multiple quantum wells after proper thermal annealing treatment. Lin, Yen-Sheng; Kuo, Ho-Hung; Feng, Shih-Wei // Journal of Materials Science: Materials in Electronics;Oct2012, Vol. 23 Issue 10, p1830 

    This study systematically investigates the relation between strain energy and quantum dot (QD) formation for 30- pair InGaN/GaN multiple quantum wells (QW) by means of atomic force microscopy and high-resolution transmission electron microscopy. The results show that a higher number of quantum...

  • Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study. Kaminska, A.; Strak, P.; Borysiuk, J.; Sobczak, K.; Domagala, J. Z.; Beeler, M.; Grzanka, E.; Sakowski, K.; Krukowski, S.; Monroy, E. // Journal of Applied Physics;1/7/2016, Vol. 119 Issue 1, p015703-1 

    The results of comprehensive theoretical and experimental study of binary GaN/AlN multi-quantum well (MQW) systems oriented along polar c-direction of their wurtzite structure are presented. A series of structures with quantum wells and barriers of various thicknesses were grown by...

  • Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques. Ponce, F. A.; Cherns, D.; Young, W. T.; Steeds, J. W. // Applied Physics Letters;8/5/1996, Vol. 69 Issue 6, p770 

    A combination of transmission electron microscopy imaging and diffraction techniques is used to characterize crystal defects in homoepitaxial GaN thin films. The Burgers vectors of dislocations is established by combining large-angle convergent beam electron diffraction and conventional...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics