Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN

Zhao, Z. M.; Jiang, R. L.; Chen, P.; Xi, D. J.; Yu, H. Q.; Shen, B.; Zhang, R.; Shi, Y.; Gu, S. L.; Zheng, Y. D.
July 2001
Applied Physics Letters;7/9/2001, Vol. 79 Issue 2
Academic Journal
Al and Ti/Al/Pt/Au ohmic contacts on GaN epitaxial layers were studied. The epilayers were grown on Si (111) substrates by low-pressure metalorganic chemical vapor deposition. Al/GaN contacts achieved a minimum contact resistivity of 7.5×10[sup -3] Ω cm[sup 2] after annealing in N[sub 2] ambient at 450 °C for 3 min. Further annealing degraded the contacts. Ti/Al/Pt/Au and GaN contacts achieved a minimum contact resistivity of 8.4×10[sup -5] Ω cm[sup 2] after annealing in N[sub 2] at 650 °C for 20 s. The Ti/Al/Pt/Au contacts on GaN showed a better thermal stability than Al/GaN contacts. After annealing at 600 °C for 30 min. they were still ohmic contacts. The mechanisms for ohmic contact formation of Ti/Al/Pt/Au contacts were also analyzed. © 2001 American Institute of Physics.


Related Articles

  • Surface potential of n- and p-type GaN measured by Kelvin force microscopy. Barbet, S.; Aubry, R.; Di Forte-Poisson, M.-A.; Jacquet, J.-C.; Deresmes, D.; Mélin, T.; Théron, D. // Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p212107 

    n- and p-type GaN epitaxial layers grown by metal-organic chemical vapor deposition with different doping levels have been characterized by Kelvin probe force microscopy (KFM). To investigate the surface states of GaN beyond instrumental and environmental fluctuations, a KFM calibration...

  • Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH[sub 3]CSNH[sub 2] solution. Song, June O; Park, Seong-Ju; Seong, Tae-Yeon // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3129 

    We investigate the effect of CH[sub 3]CSNH[sub 2] solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×10[sup 18] cm[sup -3]). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample....

  • Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. Zhou, L.; Lanford, W.; Ping, A. T.; Ping, A.T.; Adesida, I.; Yang, J. W.; Yang, J.W.; Khan, A. // Applied Physics Letters;6/5/2000, Vol. 76 Issue 23 

    Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (N[sub A]=3.0x10[sup 17] cm[sup -3]) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700 °C. The best ohmic contacts...

  • Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN. Jang, Ja-Soon; Ja-Soon Jang; Seong, Tae-Yeon; Tae-Yeon Seong // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    We report on the electronic transport mechanisms for nonalloyed Pt Ohmic contacts to p-GaN which were surface treated using a buffered oxide etch solution and (NH[sub 4])[sub 2]S[sub x]. Measurements show that the value of the effective Richardson constant (A[sup **]) is 12 A cm-2 K-2, which is...

  • Low-resistance ohmic contacts to p-type GaN. Li, Y.-L.; Schubert, E. F.; Schubert, E.F.; Graff, J. W.; Graff, J.W.; Osinsky, A.; Schaff, W. F.; Schaff, W.F. // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    The specific contact resistance of two types of ohmic contacts to p-type GaN is analyzed. First, an ohmic contact formed by a metal electrode deposited on a highly doped p-type GaN layer. Second, an ohmic contact formed by a metal electrode deposited on a thin GaN layer with an internal electric...

  • Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN. Lin, Yow-Jon; Yow-Jon Lin; Lee, Ching-Ting; Ching-Tee Lee // Applied Physics Letters;12/11/2000, Vol. 77 Issue 24 

    To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0x10[sup -5] Ω cm[sup 2] for the Ti/Al nonalloyed...

  • Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN. Huh, Chul; Kim, Sang-Woo; Kim, Hyun-Min; Kim, Dong-Joon; Park, Seong-Ju // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1942 

    The effects of an alcohol-based (NH[sub 4])[sub 2]S solution [t-C[sub 4]H[sub 9]OH+(NH[sub 4])[sub 2]S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56x10[sup -2] to 4.71x10[sup -5] Ω cm[sup 2] as a...

  • Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl[sub 2] inductively coupled plasma. Jang, Ho Won; Jeon, Chang Min; Kim, Jong Kyu; Lee, Jong-Lam // Applied Physics Letters;4/2/2001, Vol. 78 Issue 14, p2015 

    A room-temperature Ti/Al Ohmic contact on n-type GaN was obtained by surface treatment using Cl[sub 2] inductively coupled plasma treatment. The specific contact resistivity was dramatically decreased from the Schottky behavior to 9.4x10[sup -6] Ω cm[sup 2] by the treatment. The binding...

  • Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH[sub 4])[sub 2]S[sub x]-treated n-type GaN layers. Lee, Ching-Ting; Lin, Yow-Jon; Lin, Chun-Hung // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p3825 

    We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH[sub 4])[sub 2]S[sub x]-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH[sub 4])[sub 2]S[sub x] solution. The resultant Ga/N...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics