TITLE

Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN

AUTHOR(S)
Zhao, Z. M.; Jiang, R. L.; Chen, P.; Xi, D. J.; Yu, H. Q.; Shen, B.; Zhang, R.; Shi, Y.; Gu, S. L.; Zheng, Y. D.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/9/2001, Vol. 79 Issue 2
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Al and Ti/Al/Pt/Au ohmic contacts on GaN epitaxial layers were studied. The epilayers were grown on Si (111) substrates by low-pressure metalorganic chemical vapor deposition. Al/GaN contacts achieved a minimum contact resistivity of 7.5×10[sup -3] Ω cm[sup 2] after annealing in N[sub 2] ambient at 450 °C for 3 min. Further annealing degraded the contacts. Ti/Al/Pt/Au and GaN contacts achieved a minimum contact resistivity of 8.4×10[sup -5] Ω cm[sup 2] after annealing in N[sub 2] at 650 °C for 20 s. The Ti/Al/Pt/Au contacts on GaN showed a better thermal stability than Al/GaN contacts. After annealing at 600 °C for 30 min. they were still ohmic contacts. The mechanisms for ohmic contact formation of Ti/Al/Pt/Au contacts were also analyzed. © 2001 American Institute of Physics.
ACCESSION #
4758994

 

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