TITLE

Effect of acceptor and donor dopants on polarization components of lead zirconate titanate thin films

AUTHOR(S)
Majumder, S. B.; Roy, B.; Katiyar, R. S.; Krupanidhi, S. B.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/9/2001, Vol. 79 Issue 2
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have compared the magnitudes of reversible and irreversible polarization components of sol–gel-derived Nd[sup 3+]- and Fe[sup 3+]-doped PZT (53/47) thin films on platinized silicon substrates. Beyond the switching field, it was found that the reversible component of the polarization remains almost constant both for donor- (Nd[sup 3+]) and acceptor- (Fe[sup 3+]) doped PZT films. The irreversible polarization component reduces with the increase in Nd[sup 3+] content, whereas it increases until 3 at. % Fe[sup 3+]-doped PZT thin films. The dielectric behavior of these films at subswitching fields was analyzed in terms of Rayleigh law. The inverse of the Raleigh coefficient (υ) was considered as a measure of the obstacle for the domain-wall motion. In the case of Fe-doped PZT, the inverse of the Raleigh coefficient (υ) shows a declining linearity with Fe content, which may be found exactly opposite to that observed for Nd-doped PZT. The observed results are explained in terms of the nature of the defect-domain-wall interaction of acceptor-and-donor-doped PZT thin films. Studies indicated that in the case of Fe-doped PZT films, the possible defect interaction initiates only above 2 at. % and it was found to be much lower in magnitude in comparison with the Nd doping. © 2001 American Institute of Physics.
ACCESSION #
4758985

 

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