Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions

Nozaki, T.; Shiota, Y.; Shiraishi, M.; Shinjo, T.; Suzuki, Y.
January 2010
Applied Physics Letters;1/11/2010, Vol. 96 Issue 2, p022506
Academic Journal
A voltage-induced perpendicular magnetic anisotropy change in an ultrathin FeCo layer was observed in an epitaxial magnetic tunnel junction (MTJ) structure. A spin-transfer induced ferromagnetic resonance measurement technique was used under various bias voltage applications to evaluate the anisotropy change. From the peak frequency shifts, we could estimate that a surface magnetic anisotropy change of 15 μJ/m2 was induced by an electric field application of 400 mV/nm in the MTJ with a 0.5 nm thick FeCo layer. The realization of voltage-induced anisotropy changes in an MTJ structure should have a large impact on the development of electric-field driven spintronic devices.


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