TITLE

Memory effect of a single-walled carbon nanotube on nitride-oxide structure under various bias conditions

AUTHOR(S)
Hongsik Park; Hyunjung Shin; Jin Ho Kim; Seungbum Hong; Xu, Jimmy
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/11/2010, Vol. 96 Issue 2, p023101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the memory effect of single-walled carbon nanotubes (SWNTs) placed on a nitride-oxide layer structure designed as a charge storage medium. The conductance of the SWNT was modulated by the injected charge in the nitride-oxide interface and the polarities of injected charges were then detected. A large on/off-state current ratio (>104) was obtained at a small program/erase voltage range (<3 V). We also studied the effect of a half-selected cell on the conductance of the SWNTs to identify the issues with cross-point memory architecture.
ACCESSION #
47587991

 

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