Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

Luna, E.; Satpati, B.; Rodriguez, J. B.; Baranov, A. N.; Tournié, E.; Trampert, A.
January 2010
Applied Physics Letters;1/11/2010, Vol. 96 Issue 2, p021904
Academic Journal
The unique properties of the noncommon-atom InAs/GaSb short-period-superlattices (SPSL) strongly depend on the interface structure. These interfaces are characterized using transmission electron microscopy (TEM). The compositional sharpness is obtained from the comparison of the experimental contrast in g002 two-beam dark-field TEM images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions. The interfacial intermixing, defined by the chemical width, is obtained for SPSL with different periods and layer thicknesses, even in the extreme case of nominally less than 3 ML thick InAs layers. Nominal 1 ML InSb layers intentionally inserted are also identified.


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