TITLE

Direct visualization and in-depth physical study of metal filament formation in percolated high-κ dielectrics

AUTHOR(S)
Li, X.; Pey, K. L.; Bosman, M.; Liu, W. H.; Kauerauf, T.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/11/2010, Vol. 96 Issue 2, p022903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The migration of Ta atoms from a transistor gate electrode into the percolated high-κ (HK) gate dielectrics is directly shown using transmission electron microscopy analysis. A nanoscale metal filament that formed under high current injection is identified to be the physical defect responsible for the ultrafast transient breakdown (BD) of the metal-gate/high-κ (MG/HK) gate stacks. This highly conductive metal filament poses reliability concerns for MG/HK gate stacks as it significantly reduces the post-BD reliability margin of a transistor.
ACCESSION #
47587979

 

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