Fully inverted single-digit nanometer domains in ferroelectric films

Tayebi, Noureddine; Narui, Yoshie; Franklin, Nathan; Collier, C. Patrick; Giapis, Konstantinos P.; Nishi, Yoshio; Yuegang Zhang
January 2010
Applied Physics Letters;1/11/2010, Vol. 96 Issue 2, p023103
Academic Journal
Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density (>1 Tbit/in.2) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/in.2 data storage densities.


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