Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP

Xinhong Cheng; Dapeng Xu; Qing-Qing Sun; Dawei He; Zhongjian Wang; Yuehui Yu; David Wei Zhang; Qingtai Zhao
January 2010
Applied Physics Letters;1/11/2010, Vol. 96 Issue 2, p022904
Academic Journal
Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm2 at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively.


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