TITLE

Optical Properties Of Metastable Shallow Acceptors In Mg-Doped GaN Layers Grown By Metal-Organic Vapor Phase Epitaxy

AUTHOR(S)
Pozina, G.; Hemmingsson, C.; Bergman, J. P.; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.; Monemar, B.
PUB. DATE
January 2010
SOURCE
AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures <30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is CN, while after annealing a second more stable acceptor related to Mg became active.
ACCESSION #
47587747

 

Related Articles

  • Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates. Pozina, G.; Paskov, P. P.; Bergman, J. P.; Hemmingsson, C.; Hultman, L.; Monemar, B.; Amano, H.; Akasaki, I.; Usui, A. // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p221901 

    Metastability of near band gap UV emissions in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on thick GaN templates grown by halide vapor phase epitaxy has been studied by cathodoluminescence (CL). The CL spectrum changes its initial shape within a few minutes under electron...

  • Microstructural and optical properties of self-organized GaN quantum-dot assemblies. Panin, G. N.; Park, Y. S.; Kang, T. W.; Kim, T. W.; Wang, K. L.; Bao, M. // Journal of Applied Physics;2/15/2005, Vol. 97 Issue 4, p043527 

    The microstructural and optical properties of GaN quantum-dot (QD) assemblies self-organized in two-dimensional GaN epilayers grown on AlxGa1-xN layers by using plasma-assisted molecular beam epitaxy were investigated with high-resolution scanning electron microscopy (HRSEM) and...

  • Comparison of epitaxial thin layer GaN and InP passivations on InGaAs/GaAs near-surface quantum wells. Aierken, A.; Riikonen, J.; Sormunen, J.; Sopanen, M.; Lipsanen, H. // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p221112 

    The optical properties of the in situ epitaxial GaN and InP passivated InGaAs/GaAs near-surface quantum wells, which were fabricated by metal organic vapor phase epitaxy, are investigated. Low-temperature photoluminescence (PL), time-resolved photoluminescence, and photoreflectance are used to...

  • Improved semipolar [formula] GaN quality using asymmetric lateral epitaxy. de Mierry, P.; Kriouche, N.; Nemoz, M.; Nataf, G. // Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p191903 

    Semipolar [formula] GaN films were obtained by epitaxial lateral overgrowth from [formula] GaN templates patterned with SiO2 stripes 7 μm wide with 3 μm spacing, oriented along the [1100] GaN in-plane direction. The growth conditions were optimized in order to promote...

  • Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing. Volz, K.; Torunski, T.; Rubel, O.; Stolz, W. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 5, p053504 

    The blueshift of the fundamental energy gap of (GaIn)(NAs) upon thermal treatment is well established. However, the physical reason is still controversially discussed in literature. In the present paper we give direct structural evidence using transmission electron microscopy in combination with...

  • Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves. Ikeda, Susumu; Saiki, Koichiro; Tsutsui, Ken; Edura, Tomohiko; Wada, Yasuo; Miyazoe, Hiroyuki; Terashima, Kazuo; Inaba, Katsuhiko; Mitsunaga, Toru; Shimada, Toshihiro // Applied Physics Letters;6/19/2006, Vol. 88 Issue 25, p251905 

    Graphoepitaxial growth of a sexithiophene (6T) thin film was achieved on a thermally oxidized silicon surface with artificial periodic grooves. The surface structure was fabricated by electron beam lithography and the thin film was grown by molecular beam deposition. A well-pronounced, in-plane...

  • Investigation of In x Ga1− x N layers by local methods. Domracheva, Yana V.; Bakaleinikov, Leonid A.; Flegontova, Ekaterina Yu.; Jmerik, Valentin N.; Popova, Tatiana B.; Zamoryanskaya, Maria V. // Microchimica Acta;Jun2008, Vol. 161 Issue 3/4, p371 

    We have studied the In distribution in the epitaxial In x Ga1− x N layers ( x up to 0.5) with thickness of 100÷200 nm grown by plasma assisted molecular beam epitaxy on a c-sapphire substrates covered by the 800 nm thick GaN buffer layer. Both the electron microprobe analysis and the...

  • Scanning tunneling microscopy study of the superconducting properties of three-atomic-layer Pb films. Wang, Yilin; Chen, Mu; Li, Zhi; Wang, Lili; He, Ke; Xue, Qi-Kun; Ma, Xucun // Applied Physics Letters;12/9/2013, Vol. 103 Issue 24, p242603 

    Ultrathin Pb films with a thickness of three monolayers (ML) were prepared on α-[formula]Pb/Si(111) (Pb-SIC) substrate by molecular beam epitaxy. Despite significant defect scattering, low temperature scanning tunneling microscopy reveals a high superconducting transition temperature Tc of...

  • Analysis of the photoluminescence spectra of CdHgte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy. Voitsekhovskii, A.; Gorn, D.; Izhnin, I.; Izhnin, A.; Goldin, V.; Mikhailov, N.; Dvoretskii, S.; Sidorov, Yu.; Yakushev, M.; Varavin, V. // Russian Physics Journal;Jan2013, Vol. 55 Issue 8, p910 

    A theoretical model for description of the band diagram and the photoluminescence spectra of heteroepitaxial structures (HES) based on CdHgTe (MCT) with potential and quantum wells (QW) grown by molecularbeam epitaxy (MBE) is developed. A special feature of the model is that the model takes into...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics