Magnetotransport Properties in Diluted Magnetic Semiconductor p-Be1-xMnxTe

Nakamura, A.; Takeda, Y.; Imaoka, N.; Akimoto, R.
January 2010
AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p399
Academic Journal
Transport and magnetic properties in p-type Be1-xMnxTe (x = 0.03–0.13) grown on GaAs substrates have been investigated in the temperature range 2–300 K. At low temperature, the large negative magnetoresistance and anomalous Hall effect are observed. The temperature dependences of the resistivity with and without a magnetic field are well fitted to Mott’s law in the variable range hopping model. These results can be understood in terms of formation of bound magnetic polarons at low temperature.


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