TITLE

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

AUTHOR(S)
Syperek, M.; Leszczynski, P.; Misiewicz, J.; Pavelescu, E. M.; Gilfert, C.; Reithmaier, J. P.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p011901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the photoluminescence rise time in the tunnel injection system under weak and moderate excitation powers, we attributed to a fingerprint of a feeding process of quantum dot states with nonresonant carriers tunneling from the quantum well reservoir. We propose a simple three-level rate equation model to explain qualitatively the observed photoluminescence temporal behavior. Its result shows a good agreement with our experimental data.
ACCESSION #
47416491

 

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