TITLE

Correlation of energy band alignment and turn-on voltage in organic light emitting diodes

AUTHOR(S)
I-Wen Wu; Yu-Hung Chen; Po-Sheng Wang; Chao-Gong Wang; Shu-Han Hsu; Wu, Chih-I.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p013301
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The correlation of energy alignment and turn-on voltage of organic light emitting diodes (OLEDs) was investigated. With identical hole transport layers (HTLs) and electron transport layers (ETLs), the turn-on voltages of OLEDs are always the same, regardless of the cathode structures, such as Ca, Al, LiF/Al, and Cs2CO3/Al. For devices with various combinations of HTLs and ETLs, the turn-on voltages are equal to the energy difference between the lowest unoccupied molecular orbital of ETLs and the highest occupied molecular orbital of HTLs, taking into consideration of vacuum level shift at organic interfaces measured from ultraviolet photoemission spectroscopy.
ACCESSION #
47416484

 

Related Articles

  • High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes. Khanna, Rohit; Sang Youn Han; Pearton, S. J.; Schoenfeld, D.; Schoenfeld, W. V.; Ren, F. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p212107 

    InGaN multiquantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 510 nm were irradiated with 60Co γ-rays with doses in the range 150–2000 Mrad (Si). The forward turn-on voltage for all the irradiated LEDs was increased slightly...

  • Setting the Mood in Solid State Lighting. Keene, Mike // ECN: Electronic Component News;Sep2009, Vol. 53 Issue 10, p25 

    The article offers information on the light emitting diodes (LED)-based solid state lighting (SSL) systems. It is stated that the SSL systems have the capability to tune the chromaticity of light emitted from a luminaire. It is also stated that the systems can be configured to emit white light...

  • ILLUMINATING EVIDENCE.  // Electronics World;Jun2008, Vol. 114 Issue 1866, p20 

    The article analyses the challenges for the user to overcome before completing a design with power LEDs, particularly when it comes to determining the relationship between drive current, thermal management and effective lifetime. It describes the design benefits of using power LED to replace...

  • High-efficiency stacked white organic light-emitting diodes. Lee, Tae-Woo; Noh, Taeyong; Choi, Byoung-Ki; Kim, Myeong-Suk; Shin, Dong Woo; Kido, Junji // Applied Physics Letters;1/28/2008, Vol. 92 Issue 4, p043301 

    We report efficient tandem white organic light-emitting diodes (WOLEDs) by using bathocuproine:Cs2CO3/MoO3 as an effective interconnecting layer. We utilized two primary colors of sky blue and orange fluorescent emitters to obtain efficient white electroluminescence. Although single WOLEDs using...

  • The Effects Of Slanted Mesa Sidewall On P-N Junction GaN-Based LEDs. Othman, M. F.; Aziz, A. Abdul; Hashim, M. R. // AIP Conference Proceedings;5/20/2008, Vol. 1017 Issue 1, p89 

    Typically, most of the commercially available GaN-based LEDs (Light Emitting Diodes) are grown on sapphire as their substrates. Due to the insulating substrate, lateral current injection is employed so that the anode and cathode contacts are in side-by-side configuration. During the etching...

  • Trends and Tradeoffs in Powering LED Luminaires. Weir, Bernie // LED Journal;Nov/Dec2008, Vol. 3 Issue 6, p8 

    The article deals with trends and factors to consider in power schemes for light emitting diode luminaires. LED arrangement is mentioned as an important step to consider to achieve the required output level and achieve uniform brightness. Regulatory considerations related to voltage output level...

  • Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces. Chung Chieh Yang; Chia Feng Lin; Chun Min Lin; Cheng Chien Chang; Kuei Ting Chen; Jui Fen Chien; Chung Ying Chang // Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203103 

    InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm...

  • Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes. Lundin, W. V.; Zavarin, E. E.; Sinitsyn, M. A.; Sakharov, A. V.; Usov, S. O.; Nikolaev, A. E.; Davydov, D. V.; Cherkashin, N. A.; Tsatsulnikov, A. F. // Semiconductors;Jan2010, Vol. 44 Issue 1, p123 

    Effect of pressure in the reactor in the case of growth of active regions in the InGaN/GaN light-emitting diodes by the method of vapor-phase epitaxy from metalorganic compounds on their electroluminescent and structural properties has been studied. It is shown that, as pressure is increased,...

  • High peak luminance of molecularly dye-doped organic light-emitting diodes under intense voltage pulses. Wei, B.; Ichikawa, M.; Furukawa, K.; Koyama, T.; Taniguchi, Y. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p044506 

    The performance and efficiency of molecularly doped organic light-emitting devices (OLEDs) using voltage pulses have been investigated. The maximum current density and peak luminance have been found to depend on the pulse duration and device size, which was attributed to the heat effect in...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics