TITLE

Low-temperature electroluminescence quenching of AlGaN deep ultraviolet light-emitting diodes

AUTHOR(S)
Zhang, J. C.; Sakai, Y.; Egawa, T.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p013503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature-dependent electroluminescence (EL) properties of AlGaN deep ultraviolet light-emitting diodes (LEDs) have been studied. The low-temperature EL quenching is observed in 265 nm LEDs with p-type AlGaN heterostructure, which has not previously been reported in such short wavelength devices. However, this phenomenon disappears in those with a thin i-AlN electron blocking layer (EBL). It is found that the electron overflow becomes more severe at low temperature in the LEDs without EBL, whereas it is suppressed effectively in those with AlN EBL. On the basis of a model of temperature-dependent efficiency, the EL quenching is explained by the competition of electron overflow and radiative recombination.
ACCESSION #
47416480

 

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