Blinking suppression of single quantum dots in agarose gel

Ko, H. C.; Yuan, C. T.; Lin, S. H.; Jau Tang
January 2010
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p012104
Academic Journal
Fluorescence blinking is commonly observed in single molecule/particle spectroscopy, but it is an undesirable feature in many applications. We demonstrated that single CdSe/ZnS quantum dots in agarose gel exhibited suppressed blinking behavior. In addition, the long-time exponential bending tail of the power-law blinking statistics was found to be influenced by agarose gel concentration. We suggest that electron transfer from the light state to the dark state might be blocked due to electrostatic surrounding of gel with inherent negatively charged fibers.


Related Articles

  • Carrier transfer from wetting layer to quantum dots studied by cw-resolved and time-resolved photoluminescence in CdSe/ZnSe quantum dot system. Kim, Tae Soo; Lee, Byoung Woo; Oh, Eunsoon; Lee, Sanghoon; Furdyna, J. K. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 6, p063517 

    We have studied the cw-resolved and time-resolved photoluminescence (PL) spectra of the CdSe quantum dots (QDs), where PL peaks from the “wetting layer” and from the QDs are observed. The temporal behavior of the PL spectra after a short-pulse laser excitation provides evidence of...

  • Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy. Chen, Y. H.; Sun, J.; Jin, P.; Wang, Z. G.; Yang, Z. // Applied Physics Letters;2/13/2006, Vol. 88 Issue 7, p071903 

    For the InAs/GaAs quantum-dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS) in combination with atomic force microscopy and photoluminescence. One transition related to the light hole in the WL has...

  • Enhanced carrier confinement in quantum dots by raising wetting layer state energy. Moehl, Sebastian; Maingault, Laurent; Kheng, Kuntheak; Mariette, Henri // Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p033111 

    A quantum dot design is proposed where the wetting layer states are shifted to higher energies. It is realized by including CdTe quantum dots between two thin MgTe layers. As both materials have nearly the same lattice parameter, the first MgTe layer forms a wetting layer with high carrier state...

  • Theoretical determination of contact angle in quantum dot self-assembly. Li, X. L.; Yang, G. W. // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p171902 

    We have established an analytic thermodynamic theory to elucidate the evolution of contact angle upon the quantum dot (QD) self-assembly. It is found that the balance between surface energy and elastic relaxation energy plays a crucial role in the determination of contact angle in the...

  • Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale. Prohl, Christopher; Lenz, Andrea; Roy, Dominik; Schuppang, Josephine; Stracke, Gernot; Strittmatter, André; Pohl, Udo W.; Bimberg, Dieter; Eisele, Holger; Dähne, Mario // Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p123102 

    In0.25Ga0.75As/GaAs quantum dots grown by metalorganic vapor-phase epitaxy in a GaP matrix have been investigated on the atomic scale using cross-sectional scanning tunneling microscopy. The quantum dots have a truncated pyramidal shape with a reversed cone stoichiometry profile. All deposited...

  • Barrierless self-assembly of Ge quantum dots on Si(001) substrates with high local vicinality. Sutter, P.; Sutter, E.; Vescan, L. // Applied Physics Letters;10/17/2005, Vol. 87 Issue 16, p161916 

    In Ge heteroepitaxy on vicinal Si(001), miscut by 4.8° toward [100], pyramid-shaped faceted quantum dot islands (“huts”) form continuously from individual (105) facets on a wetting layer of coexisting (105) and (001) segments. Via this barrierless kinetic route the first...

  • Excitons in artificial quantum dots in the weak spatial confinement regime. Zaitsev, S. V.; Welsch, M. K.; Forchel, A.; Bacher, G. // Journal of Experimental & Theoretical Physics;Dec2007, Vol. 105 Issue 6, p1241 

    The exciton states in individual quantum dots prepared by the selective interdiffusion method in CdTe/CdMgTe quantum wells are studied by the methods of steady-state optical spectroscopy. The annealing-induced diffusion of Mg atoms inward to the bulk of the quantum well, which is significantly...

  • Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy. Kaniewska, M.; Engstr�m, O.; Kaczmarczyk, M. // Journal of Electronic Materials;Jun2010, Vol. 39 Issue 6, p766 

    The coexistence of quantum confined energy levels and defect energy levels in quantum dot (QD) structures may cause difficulties in distinguishing between their different origin when using deep-level transient spectroscopy (DLTS). Using InAs/GaAs QDs as demonstration vehicles, we present...

  • Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots. Shatalina, E. S.; Blokhin, S. A.; Nadtochy, A. M.; Payusov, A. S.; Savelyev, A. V.; Maximov, M. V.; Zhukov, A. E.; Ledentsov, N. N.; Kovsh, A. R.; Mikhrin, S. S.; Ustinov, V. M. // Semiconductors;Oct2010, Vol. 44 Issue 10, p1308 

    With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier emission from the quantum dots for the isolated...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics