Strain-induced lateral self-organization in Si/SiO2 nanostructures

Tsybeskov, L.; Kamenev, B. V.; Sirenko, A. A.; McCaffrey, J. P.; Lockwood, D. J.
January 2010
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p013105
Academic Journal
We show that strain, arising from the mismatch between Si and SiO2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.


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