High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)

Chang, Y.-L.; Wang, J. L.; Li, F.; Mi, Z.
January 2010
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p013106
Academic Journal
The authors report on the achievement of nearly defect-free, vertically aligned InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates by molecular beam epitaxy. Strong green, yellow, and amber emission, with a room temperature internal quantum efficiency of ∼45% of that measured at low temperature (∼10 K), was achieved. Detailed structural and optical studies further confirm that the emission characteristics are strongly influenced by the presence of In-rich nanoclusters, formed by phase segregation, in the InGaN dots.


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