TITLE

Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors

AUTHOR(S)
Te-Yu Wei; Chi-Te Huang; Hansen, Benjamin J.; Yi-Feng Lin; Lih-Juann Chen; Shih-Yuan Lu; Zhong Lin Wang
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p013508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The Schottky contact based photon detection was demonstrated using CdS (visible light responsive), silicon (indirect n-type oxygen-non-adsorbing), and CuO (indirect p-type oxygen-adsorbing) nanowire nanosensors. With changing one of the two nanowire-electrode contacts from ohmic to Schottky, detection sensitivities as high as 105% were achieved by the CdS nanowire nanosensor operated at the reverse bias mode of -8 V, which was 58 times higher than that of the corresponding ohmic contact device. The reset time was also significantly reduced. In addition, originally light nonresponsive silicon and CuO nanowires became light responsive when fabricated as a Schottky contact device. These improvements in photon detection can be attributed to the Schottky gating effect realized in the present nanosensor system by introducing a Schottky contact.
ACCESSION #
47416448

 

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