Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor

Kondo, Hiroki; Sakurai, Shinnya; Sakashita, Mitsuo; Sakai, Akira; Ogawa, Masaki; Zaima, Shigeaki
January 2010
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p012105
Academic Journal
Praseodymium (Pr) oxide films were grown by metal-organic chemical-vapor-deposition (CVD) using Pr(EtCp)3. Using H2O as an oxidant, Pr2O3 films with columnar structures are formed and its C concentration can be reduced to about one-tenth compared with the case using O2. Activation energy of 0.37 eV is derived for this CVD using H2O. This CVD-Pr oxide film deposited at 300 °C has a dielectric constant of 26±3. Furthermore, conduction band offset of 1.0±0.1 eV and trap levels of 0.40±0.02 and 0.22±0.02 eV in the CVD-Pr2O3/Si structure were also determined by current conduction characteristics.


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