TITLE

Influence of heavy doping on Seebeck coefficient in silicon-on-insulator

AUTHOR(S)
Ikeda, H.; Salleh, F.
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p012106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We measured the Seebeck coefficient of heavily P-doped silicon-on-insulator layers with P concentrations above 1×1019 cm-3. The coefficient decreased with increasing P concentration, and with a peak of the Seebeck coefficient around 5×1019 cm-3. We calculated the density-of-states (DOS) of bulk Si based on theoretical models of impurity-band formation, ionization-energy shift, and conduction-band tailing. The calculated impurity-concentration dependence of the energy derivative of the DOS at the Fermi energy also showed a peak. Consequently, the Seebeck coefficient of the heavily doped Si is ruled by the DOS distribution, similar to metallic materials.
ACCESSION #
47416446

 

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