TITLE

Ferromagnetic ordering of silicon vacancies in N-doped silicon carbide

AUTHOR(S)
Mingwen Zhao; Fengchun Pan; Liangmo Mei
PUB. DATE
January 2010
SOURCE
Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p012508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We perform first-principles calculations to investigate the roles of silicon vacancy (VSi) and nitrogen impurity in the magnetic properties of silicon carbide (3C-SiC). High-spin configurations are predicted for the negatively-charged (VSi) defects. The coupling is ferromagnetic between the (VSi) defects at -2e charge state, whereas the (VSi) defects at -e charge state prefer to interact antiferromagnetically. Substituting C with N atoms can manipulate the charge states of (VSi) defects and the magnetic interactions between them. Our work offers a possible route toward high Curie temperature (Tc) ferromagnetism in metal-free 3C-SiC materials.
ACCESSION #
47416427

 

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