Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

Weingart, S.; Bock, C.; Kunze, U.; Speck, F.; Seyller, Th.; Ley, L.
December 2009
Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p262101
Academic Journal
We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43≈-170 Ω, which is measured in a nonlocal, four-terminal configuration at 4.2 Κ and which vanishes as the temperature is increased above 80 K.


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